Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy -: art. no. 241108
Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy -: art. no. 241108
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DOI：
10.1063/1.1949730
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发表时间：
2005-06-13
影响因子：
4
通讯作者：
Morkoç, H
中科院分区：
文献类型：
--
作者：
Alivov, YI;Özgür, Ü;Morkoç, H
在商业P型6H-SIC底物上的高质量N-ZNO膜已通过等离子体辅助的分子束外延和N-ZNO/P-SIC异质结构结构而生长。 Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2x10(-4) A/cm(2) at -10 V, a breakdown voltage greater than 20 V, a forward turn on voltage of similar to 5 V, and a forward current of 2 A/cm(2) at 8 V. Photosensitivity of the diodes was studied at room temperature and a photoresponsivity of as high对于高于3.0 eV的光子能量，观察到0.045 a/w在-7.5 V反向偏置。 （c）2005年美国物理研究所。
High quality n-ZnO films on commercial p-type 6H-SiC substrates have been grown by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2x10(-4) A/cm(2) at -10 V, a breakdown voltage greater than 20 V, a forward turn on voltage of similar to 5 V, and a forward current of 2 A/cm(2) at 8 V. Photosensitivity of the diodes was studied at room temperature and a photoresponsivity of as high as 0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV. (c) 2005 American Institute of Physics.