Spin-torque transistor
Spin-torque transistor
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DOI:
10.1063/1.1579122
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发表时间:
2003-06-02
影响因子:
4
通讯作者:
van Wees, BJ
中科院分区:
文献类型:
--
作者:
Bauer, GEW;Brataas, A;van Wees, BJ
A magnetoelectronic thin- film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure - drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin- torque created by a control spin valve. The device can operate at room temperature, but in order to be useful, ferromagnetic materials with polarizations close to unity are required. (C) 2003 American Institute of Physics.