Dynamics of Consolidation and Crack Growth in Nanocluster‐Assembled Amorphous Silicon Nitride
Dynamics of Consolidation and Crack Growth in Nanocluster‐Assembled Amorphous Silicon Nitride
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纳米团簇组装非晶氮化硅中固结和裂纹扩展的动力学
DOI：
10.1111/j.1151-2916.1998.tb02354.x
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发表时间：
2005
影响因子：
3.9
通讯作者：
P. Vashishta
中科院分区：
文献类型：
--
作者：
K. Tsuruta;A. Nakano;R. Kalia;P. Vashishta
采用10{sup 6}原子分子动力学模拟方法研究了纳米非晶Si{sub 3}N{sub 4}的固结和断裂动力学。在15 GPa和2，000 K的压力下，纳米相系统几乎在纳秒的几分之一内完全固结。烧结的经典理论很好地描述了固结过程。在施加的应变下，固结系统发展出多个彼此平行扩展的裂纹，导致多个部位的破坏。纳米相系统断裂的临界应变远大于晶体Si{sub 3}N{sub 4}的临界应变。
Consolidation and fracture dynamics in nanophase amorphous Si{sub 3}N{sub 4} are investigated using 10{sup 6}-atom molecular-dynamics simulations. At a pressure of 15 GPa and 2,000 K, the nanophase system is almost fully consolidated within a fraction of a nanosecond. The consolidation process is well-described by the classical theory of sintering. Under an applied strain the consolidation system develops several cracks which propagate parallel to each other, causing failure at multiple sites. The critical strain at which the nanophase system fractures is much larger than that for crystalline Si{sub 3}N{sub 4}.