Electron-phonon interaction and localization of surface-state carriers in a metallic monolayer
Electron-phonon interaction and localization of surface-state carriers in a metallic monolayer
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DOI：
10.1103/physrevlett.99.146805
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发表时间：
2007-10-05
影响因子：
8.6
通讯作者：
Hasegawa, Shuji
中科院分区：
文献类型：
--
作者：
Matsuda, Iwao;Liu, Canhua;Hasegawa, Shuji
用微四探针法和光电子能谱研究了金属表面超结构Si(111)Root 3x Root 3-Ag的电子输运随温度的变化。表面态电导在150K附近表现出从金属导电到强局域化的急剧转变，金属区是由电子-声子相互作用引起的，而局域化似乎源于电子波的相干。由缺陷周围表面电子的Friedel振荡引起的随机势变化可能会导致强烈的载流子局域化。
Temperature-dependent electron transport in a metallic surface superstructure, Si(111) root 3 x root 3-Ag, was studied by a micro-four-point probe method and photoemission spectroscopy. The surface-state conductivity exhibits a sharp transition from metallic conduction to strong localization at similar to 150 K. The metallic regime is due to electron-phonon interaction while the localization seemingly originates from coherency of electron waves. Random potential variations, caused by Friedel oscillations of surface electrons around defects, likely induce strong carrier localization.