Quantum Calculations of Electron Tunneling in Respiratory Complex III.

Quantum Calculations of Electron Tunneling in Respiratory Complex III.
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呼吸复合体中电子隧道效应的量子计算 III。

DOI:
10.1021/acs.jpcb.5b09424
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发表时间:
2015
期刊:
The journal of physical chemistry. B
影响因子:
--
通讯作者:
Stuchebrukhov,AlexeiA
Stuchebrukhov,AlexeiA
中科院分区:
--
文献类型:
--
作者:
Hagras,MuhammadA;Hayashi,Tomoyuki;Stuchebrukhov,AlexeiA

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据报道,迄今为止最详细、最全面的有氧细胞呼吸复合物 III(也称为 bc1 复合物)中电子转移反应的研究。在隧道电流理论的框架中,研究了质子动力Q循环不同阶段的所有电子转移反应的不同氧化还原中心之间的电子隧道速率和原子隧道路径。计算表明,复合体 III 是一种智能纳米机器,在某些条件下会发生构象变化,从而控制电子转移,或将电子引导到特定路径。隧道计算采用单电子隧道近似,并使用混合破对称(BS)无限制DFT/ZINDO理论水平进行。隧道轨道是使用精确的双正交化方案确定的,该方案将具有小重叠的隧道轨道对与具有显着重叠的剩余弗兰克-康登轨道分开。不同氧化还原对中的电子转移速率表现出指数距离依赖性,与报道的实验数据一致;一些反应涉及耦合质子转移。给出了 Qosite 处协同双电子分叉隧道反应的正确处理。
The most detailed and comprehensive to date study of electron transfer reactions in the respiratory complex III of aerobic cells, also known asbc1complex, is reported. In the framework of the tunneling current theory, electron tunneling rates and atomistic tunneling pathways between different redox centers were investigated for all electron transfer reactions comprising different stages of the proton-motive Q-cycle. The calculations reveal that complex III is a smart nanomachine, which under certain conditions undergoes conformational changes gating electron transfer, or channeling electrons to specific pathways. One-electron tunneling approximation was adopted in the tunneling calculations, which were performed using hybrid Broken-Symmetry (BS) unrestricted DFT/ZINDO levels of theory. The tunneling orbitals were determined using an exact biorthogonalization scheme that uniquely separates pairs of tunneling orbitals with small overlaps out of the remaining Franck–Condon orbitals with significant overlap. Electron transfer rates in different redox pairs show exponential distance dependence, in agreement with the reported experimental data; some reactions involve coupled proton transfer. Proper treatment of a concerted two-electron bifurcated tunneling reaction at the Qosite is given.
DOI: 10.1016/0022-5193(76)90124-7
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影响因子: 2
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电子耦合矩阵元件的跃迁磁通公式。
DOI: 10.1021/jp512699a
发表时间: 2015
期刊: The journal of physical chemistry. B
影响因子: --
作者:
Hagras,MuhammadA;Stuchebrukhov,AlexeiA
通讯作者: Stuchebrukhov,AlexeiA
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影响因子: 3.7
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