Metal/semiconductor incommensurate structure with a rare domain configuration exhibiting p31m symmetry
Metal/semiconductor incommensurate structure with a rare domain configuration exhibiting p31m symmetry
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DOI：
10.1103/physrevb.61.12608
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发表时间：
2000-05-15
影响因子：
3.7
通讯作者：
Wang, YL
中科院分区：
文献类型：
--
作者：
Lai, MY;Wang, YL
用扫描隧道显微镜直接观察到Ga/Si（III）表面上的无公度覆盖层结构，它可以用电子衍射方法观察到的6.3根3X6.3根3R 30度超结构来识别。这种结构的畴壁图案主要由一系列孤立的三角形组成，与通常在无公度覆盖层上观察到的网状网络形成对比。该结构的一个特定特征是，它采用具有p31 m对称性的罕见畴配置，而不是下面的Si（III）双层的p3 m1对称性，以松弛由其相对高的Ga覆盖引起的应变。
An incommensurate overlayer structure on a Ga/Si(lll) surface, which can be identified with the 6.3 root 3 x 6.3 root 3R30 degrees superstructure observed by the electron diffraction method, has been directly observed using scanning tunneling microscopy. The domain-wall pattern of this structure consists mainly of an array of isolated triangles, in contrast to the meshlike network usually observed on an incommensurate overlayer. A particular feature of this structure is that it assumes a rare domain configuration with p31m symmetry, rather than the p3m1 symmetry of the underlying Si(lll) double layer, to relax the strain induced by its relatively high Ga coverage.