Galvanomagnetic properties of single-crystal bismuth-antimony thin films
Galvanomagnetic properties of single-crystal bismuth-antimony thin films
复制标题
单晶铋锑薄膜的电磁性能
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
J. Heremans
中科院分区：
文献类型：
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作者：
D. Morelli;D. L. Partin;J. Heremans
描述了使用分子束外延技术生长第一块纯铋锑合金薄（约 1 μm）外延膜。这些结构在高温下在（111）取向的单晶氟化钡基底上生长。电子显微镜观察显示，薄膜无特征且无 0.1 μm 尺度的缺陷。这些薄膜的三角轴平行于基板的（111）轴生长，劳厄背散射图片显示它们是外延的。 x=0 的合金的迁移率在室温下为 2 m2 V-1 s-1 量级，在 20 K 时增加到 10 以上，在液氦温度下增加到 100 以上。这些值远远优于根据数据生长的其他铋薄膜的值，并且接近在单晶铋中观察到的迁移率。能隙和c轴晶格常数对x的依赖性与块体合金不同，这可能是由于样品和基体之间3.6%的晶格失配引起的应变的影响。
Describes growth of the first thin ( approximately 1 mu m) epitaxial films of pure bismuth-antimony alloys using molecular beam epitaxy techniques. These structures were grown at elevated temperatures on single-crystal barium fluoride substrates of (111) orientation. Electron microscope observations show the films to be featureless and defect-free on the scale of 0.1 mu m. The films grow with their trigonal axis parallel to the (111) axis of the substrate, and Laue-backscattering pictures show that they are epitaxial. Mobilities of alloys with x=0 are of the order of 2 m2 V-1 s-1 at room temperature and increase to over 10 at 20 K and 100 at liquid helium temperatures. These values are far superior to those of other bismuth films grown to data, and approach mobilities observed in single-crystal bismuth. The dependence of energy gap and c axis lattice constant on x is different from that in bulk alloys, which may be due to the effects of strain arising from the 3.6% lattice mismatch between sample and substrate.