Growth of CeCoIn5 thin films on a- and r-Al2O3 substrates
Growth of CeCoIn5 thin films on a- and r-Al2O3 substrates
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CeCoIn5 薄膜在 a- 和 r-Al2O3 基板上的生长
DOI：
10.1088/0953-8984/19/5/056006
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
M. Huth
中科院分区：
文献类型：
--
作者：
O. Soroka;G. Blendin;M. Huth
采用分子束外延的方法在a面（1120）和r面（1102）取向Al2O3衬底上沉积了CeCoIn5薄膜，并在2 K左右的转变温度下获得了超导薄膜。它们的输运性质与块状材料相当，电阻率表现出典型的重费米子行为。通过x射线衍射和扫描隧道显微镜对其生长特性进行了研究，发现（001）取向生长具有明显的岛状结构。根据能量色散x射线分析所得薄膜的化学成分，推导出三元相形成图。
Thin films of CeCoIn5 were deposited on a-plane (1120)- and r-plane (1102)-oriented Al2O3 substrates by using molecular beam epitaxy and were found to be superconductive with transition temperatures about 2 K. Their transport properties are comparable with those of the bulk material and the resistivity shows typical heavy-fermion behaviour. The growth characteristics were studied by means of x-ray diffraction and scanning tunnelling microscopy and revealed (001)-oriented growth with pronounced island formation. Based on the chemical composition of the films obtained using energy dispersive x-ray analysis, a ternary phase formation diagram was deduced.