Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors
Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors
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半导体超浅高密度掺杂剖面的同步导带和价带量子化
DOI：
10.1103/physrevlett.120.046403
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发表时间：
2018
影响因子：
8.6
通讯作者：
Mazzola F
中科院分区：
文献类型：
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作者：
Mazzola F
我们演示了同时量子化的导带（CB）和价带（VB）状态的硅使用超浅，高密度，磷掺杂的配置文件（所谓的Si：球员）。我们发现，除了众所周知的CB状态的量子化内的掺杂剂平面，VB衍生状态之间的次表面P掺杂剂层和Si表面的限制引起的VB状态在这个狭窄的区域中的同时量子化。我们还表明，VB量子化可以解释使用一个简单的粒子在一个盒子模型，和数量和能量分离的量子化VB状态依赖于Si表面下的P掺杂剂层的深度。由于量化的CB状态不显示出对掺杂剂深度的强烈依赖性（而是对掺杂剂密度的依赖性），因此通过相应地选择掺杂剂密度和深度来表现出对量化的CB和VB状态的性质的控制是直接的，从而为工程量子物质提供了新的可能性。
We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:Players). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that the VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantized CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.