Zinc‐blende (cubic) GaN bulk crystals grown by molecular beam epitaxy
Zinc‐blende (cubic) GaN bulk crystals grown by molecular beam epitaxy
复制标题
通过分子束外延生长的混锌（立方）GaN 块状晶体
DOI：
--
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
A. Kent
中科院分区：
文献类型：
--
作者：
S. Novikov;C. T. Foxon;A. Kent
我们研究了用分子束外延（MBE）生长锌掺杂（立方）GaN和AlxGa_（1-xN）层和体晶体。MBE通常被认为是一种外延技术，用于生长非常薄的层，单层控制其厚度。然而，我们已经使用MBE技术进行体晶体生长，并且已经生产出厚度高达100 μm的GaN层。采用改进的等离子体辅助分子束外延（PA-MBE）方法在半绝缘GaAs（001）衬底上生长了厚的立方GaN薄膜，并在生长后将其从衬底上去除。所得到的厚度在30-100 μm范围内的独立GaN晶片可以用作立方GaN基结构和器件的进一步外延的衬底。我们已经通过生长直径达3”的GaN层证明了该工艺的可扩展性。我们已经开发出切割晶圆和抛光晶圆的程序，以产生外延表面。我们已经证明，我们已经开发的PA-MBE工艺也使我们能够在从GaN到几乎纯AlN的整个组成范围内实现独立的锌掺杂AlxGa 1-xN晶片。（© 2011 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We have studied the growth of zinc-blende (cubic) GaN and AlxGa1-xN layers and bulk crystals by molecular beam epitaxy (MBE). MBE is normally regarded as an epitaxial technique for the growth of very thin layers with monolayer control of their thickness. However, we have used the MBE technique for bulk crystal growth and have produced GaN layers up to 100 μm in thickness. Thick, cubic GaN films were grown on semi-insulating GaAs (001) substrates by a modified plasma-assisted molecular beam epitaxy (PA-MBE) and were removed from the substrate after the growth. The resulting free-standing GaN wafers with thicknesses in the 30–100 μm range may be used as substrates for further epitaxy of cubic GaN-based structures and devices. We have demonstrated the scalability of the process by growing GaN layers up to 3” in diameter. We have developed procedures to cleave the wafers and to polish them to produce epi-ready surfaces. We have demonstrated that the PA-MBE process we have developed also allows us to achieve free-standing zinc-blende AlxGa1-xN wafers over the entire composition range from GaN to nearly pure AlN. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)