Formation of the CeSix/Si(111) interface
Formation of the CeSix/Si(111) interface
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CeSix/Si(111) 界面的形成
DOI：
10.1116/1.587874
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发表时间：
1995
影响因子：
1.4
通讯作者：
G. Kaindl
中科院分区：
文献类型：
--
作者：
I. Manke;H. Wen;A. Höhr;A. Bauer;M. Dähne;G. Kaindl
在Si（111）上沉积薄Ce膜并随后或同时退火导致形成各种结构、电子和化学上不同的CeSix相，如扫描隧道显微镜、低能电子衍射和光电子能谱所揭示的。几个阶段可以共存于同一样品，并随着退火温度的增加，观察到更大的均匀域。这种行为被归因于富Si的CeSix块体化合物的晶格与Si（111）衬底表面的晶格的失配，导致在高于700 °C的温度下形成六方CeSi1.67的薄膜，其不作为块体化合物存在。
The deposition of thin Ce films on Si(111) and subsequent or simultaneous annealing leads to the formation of various structurally, electronically, and chemically different CeSix phases, as revealed by scanning‐tunneling microscopy, low‐energy electron diffraction, and photoelectron spectroscopy. Several phases can coexist on the same sample, and with increasing annealing temperatures larger homogeneous domains are observed. This behavior is assigned to a mismatch of the lattices of the Si‐rich CeSix bulk compounds with that of the Si(111) substrate surface, resulting at temperatures above 700 °C in the formation of a thin film of hexagonal CeSi1.67, which does not exist as a bulk compound.