Characterization of band offset in α-(AlxGa1-x)2O3/ α-Ga2O3 heterostructures

Characterization of band offset in α-(AlxGa1-x)2O3/ α-Ga2O3 heterostructures
复制标题

α-(AlxGa1-x)2O3/α-Ga2O3 异质结构中能带偏移的表征

DOI：
10.1109/iciprm.2016.7528743
复制
发表时间：
2016
期刊：
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
影响因子：
--
通讯作者：
S. Fujita
S. Fujita
中科院分区：
--
文献类型：
--
作者：
T. Uchida;Riena Jinno;S. Takemoto;K. Kaneko;S. Fujita

文献摘要

相似文献

氧化镓是一种很有前途的功率器件材料。重点研究了氧化镓（α-Ga2O3）和α-（AlxGa1-x）2O3/α-Ga2O3异质结器件.<sub></sub><sub></sub><sub></sub><sub></sub><sub></sub><sub></sub><sub></sub><sub></sub>我们在c面蓝宝石衬底上制备了α-（AlxGa1-x）2O3合金和这些层状结构。<sub></sub><sub></sub><sub></sub><sub></sub>用X射线光电子能谱（XPS）测量了α-Ga2O3/α-（AlxGa1-x）2O3异质结的能带偏移。<sub></sub><sub></sub><sub></sub><sub></sub><sub></sub><sub></sub>带对齐估计为I型，具有非常窄的价带偏移能量。
Gallium Oxide is a promising material for power device applications. We focused on corundum structured gallium oxide (α-Ga<sub>2</sub>O<sub>3</sub>) and α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>/ α-Ga<sub>2</sub>O<sub>3</sub> heterostructure devices. We prepared α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> alloy and these laminate structures on c-plane sapphire substrates. The band offset of the α-Ga<sub>2</sub>O<sub>3</sub>/α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> heterostructure was measured by X-ray photoelectron spectroscopy (XPS). The band alignment was estimated to be type I with very narrow valence-band offset energy.