Growth mechanism of the Si ⟨ 110 ⟩ faceted dendrite
Growth mechanism of the Si ⟨ 110 ⟩ faceted dendrite
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DOI：
10.1103/physrevb.81.224106
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发表时间：
2010-06
影响因子：
3.7
通讯作者：
K. Fujiwara;H. Fukuda;N. Usami;K. Nakajima;S. Uda
中科院分区：
文献类型：
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作者：
K. Fujiwara;H. Fukuda;N. Usami;K. Nakajima;S. Uda
采用原位观察技术研究了Si $110 $小面枝晶的生长机制.我们直接观察了硅熔体中硅小面枝晶的生长过程。结果表明，$<$110 <$$小面枝晶与$<$112 <$$小面枝晶在生长过程中的形状明显不同，$<$110 <$$小面枝晶的尖端较窄，而$<$112 <$$小面枝晶的尖端较宽。我们提出了一个基于实验证据的小面枝晶生长形状的方案。
The growth mechanism of the Si $⟨110⟩$ faceted dendrite was studied using an in situ observation technique. We directly observed the growth process of Si faceted dendrites from Si melts. It was found that the shape of the $⟨110⟩$ faceted dendrite during growth is markedly different from that of the $⟨112⟩$ faceted dendrite; the tip of the $⟨110⟩$ faceted dendrite is narrow while that of the $⟨112⟩$ faceted dendrite is wide. We present a scheme for the growth shapes of the faceted dendrites based on the experimental evidences.