Temperature dependence and irradiation response of 1/f-noise in MOSFETs
Temperature dependence and irradiation response of 1/f-noise in MOSFETs
复制标题
MOSFET 中 1/f 噪声的温度依赖性和辐射响应
DOI：
10.1109/tns.2002.805354
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发表时间：
2002
影响因子：
1.8
通讯作者：
A. Sternberg
中科院分区：
文献类型：
--
作者：
H. Xiong;D. Fleetwood;B. Choi;A. Sternberg
测量栅极氧化物厚度为 48 nm 的 3 /spl mu/m/spl times/16 /spl mu/m nMOS 晶体管的 1/f 噪声与频率 (f)、栅极电压 (V/sub g/) 和温度 (T) 的函数关系。对于 85 K/spl les/T/spl les/320 K 的温度范围，在 0.3 Hz/spl les/f/spl les/1 kHz 的频率下进行噪声测量，V/sub g/-V/sub th/=2 V，其中 V/sub th/ 是阈值电压。设备在其线性状态下以强反转运行。对 MOS 晶体管 1/f 噪声的温度和频率依赖性的详细比较显示了 Si 沟道和氧化物缺陷之间热激活电荷交换的重要性。 X射线照射后，噪声功率在正偏压照射后增加，在照射后退火后降低，与之前的工作一致。对于这些器件和实验条件，对噪声幅度的温度依赖性和频率依赖性的详细比较表明，Dutta 和 Horn 的模型很好地描述了 nMOS 晶体管的 1/f 噪声。因此，我们能够提取导致大部分噪声的近界面氧化物（边界）陷阱在辐照前后的能量分布。
Measured the 1/f-noise of 3 /spl mu/m/spl times/16 /spl mu/m nMOS transistors with gate-oxide thickness of 48 nm as a function of frequency (f), gate voltage (V/sub g/), and temperature (T). For a temperature range of 85 K/spl les/T/spl les/320 K, noise measurements were performed at frequencies of 0.3 Hz/spl les/f/spl les/1 kHz with V/sub g/-V/sub th/=2 V, where V/sub th/ is the threshold voltage. Devices were operated in strong inversion in their linear regimes. A detailed comparison of the temperature and frequency dependences of the 1/f-noise of MOS transistors shows the importance of thermally activated charge exchange between the Si channel and defects in the oxide. After X-ray irradiation, the noise power increases after positive-bias irradiation and decreases after postirradiation annealing, in agreement with previous work. For these devices and experimental conditions, detailed comparisons of the temperature dependencies of the noise magnitude and frequency dependence show that the 1/f-noise of nMOS transistors is very well described by the model of Dutta and Horn. As a result, we are able to extract the energy distributions before and after irradiation for the near-interfacial oxide (border) traps that cause the majority of the noise.