Temperature dependence of charge carrier mobility in single-crystal chemical vapour deposition diamond
Temperature dependence of charge carrier mobility in single-crystal chemical vapour deposition diamond
复制标题
单晶化学气相沉积金刚石中电荷载流子迁移率的温度依赖性
DOI：
--
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
N. Wermes
中科院分区：
文献类型：
--
作者：
H. Jansen;D. Dobos;T. Eisel;H. Pernegger;V. Eremin;N. Wermes
利用瞬态电流技术测量了单晶化学气相沉积金刚石中载流子迁移率的温度依赖性，温度范围从2 K到室温。α-源在金刚石体中产生自由载流子。研究了在外加电场作用下，由其漂移引起的电流信号随温度和电场强度的变化规律。电场强度的变化是原来的30倍。这些测量结果用于提取传输时间、漂移速度、饱和速度和低场迁移率，并以此来解释结果。已经研究了三个样品，它们表现出相同的行为。对于空穴，由于声子散射，迁移率随温度降低而增加，但在超冷温度下饱和。测得空穴在室温下的低场迁移率为μ0h(295K)=（2534±20）…
Measurements of the temperature dependence of the charge carrier mobility in single-crystal chemical vapour deposition diamond using the transient current technique are presented in a temperature range from 2 K to room temperature. An α-source is used to create free charge carriers in the diamond bulk. The evolution of the current signal induced by their drift under the influence of an externally applied field is studied as a function of the temperature and the electric field strength. The electric field strength is varied by a factor of 30. The measurements are used to extract the transit time, the drift velocity, the saturation velocity, and the low-field mobility in terms of which the results are interpreted. Three samples have been studied which show the same behaviour. For holes, the mobility increases with decreasing temperature due to the acoustic phonon scattering, but it saturates for ultra-cold temperatures. The low-field mobility for holes at room temperature is measured as μ0h(295K)=(2534±20) ...