42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide.
42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide.
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DOI：
10.1364/oe.17.006252
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发表时间：
2009-04
期刊：
影响因子：
3.8
通讯作者：
L. Vivien;J. Osmond;J. Fédéli;D. Marris‐Morini;P. Crozat;J. Damlencourt;E. Cassan;Y. Lecunff;S. Laval
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文献类型：
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作者：
L. Vivien;J. Osmond;J. Fédéli;D. Marris‐Morini;P. Crozat;J. Damlencourt;E. Cassan;Y. Lecunff;S. Laval
在亚微米SOI脊形波导中集成了一种紧凑的PIN锗光电探测器。使用对接耦合配置将检测器长度减小到15微米，这足以完全吸收波长为1.55微米的光。在4V反向偏压下测得-3dB带宽为42GHz，在1.55 μ m波长处的响应度高达1A/W，暗电流密度为60mA/cm~2。在1.52 μ m波长处，在-0.5V偏压下，获得了1A/W的响应度。该工艺与CMOS技术完全兼容。
A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 microm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm. A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse bias with a responsivity as high as 1 A/W at the wavelength of 1.55 microm and a low dark current density of 60 mA/cm(2). At a wavelength of 1.52 microm, a responsivity of 1 A/W is obtained under -0.5 V bias. The process is fully compatible with CMOS technology.