Cleaning diamond surfaces via oxygen plasma inhibits the formation of a TiC interface
Cleaning diamond surfaces via oxygen plasma inhibits the formation of a TiC interface
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DOI：
10.1016/j.diamond.2022.109058
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发表时间：
2022-04-30
影响因子：
4.1
通讯作者：
Nemanich, Robert J.
中科院分区：
文献类型：
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作者：
Johnson, Holly M.;Brown, Jesse M.;Nemanich, Robert J.
已知金刚石-钛界面处的TiC是用于金刚石基电子器件的稳定且有益的层。然而，某些清洁步骤可能会改变该界面的化学成分。一种这样的工艺是氧等离子体蚀刻，其用氧终止金刚石的表面。氧与钛具有高度反应性，形成氧化钛。理论上，在器件制作后，通过充分的退火可以改善钛-金刚石界面。为了测试这一点，我们通过XPS研究了氧终止的多晶B掺杂金刚石和钛的界面，以确定氧是否会重新排列远离金刚石表面，并且TiC是否会通过沉积后退火形成。在900 ℃退火后，发现在该实验中的任何点都没有检测到TiC。氧终止，尽管其去浮渣的能力，可能会抑制TiC在金刚石表面的形成。
TiC at the diamond-titanium interface is known to be a stable and beneficial layer for diamond based electronic devices. However, certain cleaning steps can alter the chemical composition of this interface. One such process is oxygen plasma etching, which terminates the surface of the diamond with oxygen. Oxygen is highly reactive with titanium, forming titanium oxides. Theoretically the titanium-diamond interface can be improved through suf-ficient annealing after device fabrication. To test this, we investigated the interface of oxygen-terminated polycrystalline B-doped diamond and titanium via XPS in an effort to determine if oxygen would rearrange away from the diamond surface and TiC would be formed through post-deposition annealing. After annealing at temperatures up to 900 ?, it was found that TiC was not detected at any point in this experiment. Oxygen-termination, despite its de-scumming capabilities, likely inhibits the formation of TiC at the diamond surface.