Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing
Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing
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低温加工硫系钙钛矿BaZrS3薄膜电子和光电器件
DOI：
10.1016/j.nanoen.2021.105959
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发表时间：
2021-03-13
期刊：
影响因子：
17.6
通讯作者：
Zeng, Hao
中科院分区：
文献类型：
--
作者：
Yu, Zhonghai;Wei, Xiucheng;Zeng, Hao
由于其上级可见光吸收和高化学稳定性，硫属钙钛矿钡锆硫化物（BaZrS 3）在过去几年中作为用于光电子学的混合卤化物钙钛矿的潜在替代物而引起了显著的关注。然而，BaZrS 3薄膜的加工温度高于1000摄氏度，严重限制了其器件应用的潜力。在这里，我们报告的BaZrS 3薄膜的合成温度低至500摄氏度，通过改变化学反应途径。通过X射线衍射和拉曼光谱证实了BaZrS 3薄膜为单相。原子力显微镜和扫描电子显微镜表明，晶体尺寸和表面粗糙度一致降低退火温度。较低的温度进一步消除了与高温处理相关的硫空位和碳污染。在较低温度下合成硫属化物钙钛矿薄膜的能力消除了其器件制造的主要障碍。光电探测器表现出快速响应和80的开/关比。所制造的场效应晶体管显示出双极行为，电子和空穴迁移率分别为16.8 cm 2/Vs和2.6 cm 2/Vs。
Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide (BaZrS3) has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS3 thin films at above 1000 degrees C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS3 thin films at temperatures as low as 500 degrees C, by changing the chemical reaction pathway. The single phase BaZrS3 thin film was confirmed by X-ray diffraction and Raman spectroscopy. Atomic force microscopy and scanning electron microscopy show that crystalline size and surface roughness were consistently reduced with decreasing annealing temperature. The lower temperatures further eliminate sulfur vacancies and carbon contaminations associated with high temperature processing. The ability to synthesize chalcogenide perovskite thin films at lower temperatures removes a major hurdle for their device fabrication. The photodetectors demonstrate fast response and an on/off ratio of 80. The fabricated field effect transistors show an ambipolar behavior with electron and hole mobilities of 16.8 cm2/Vs and 2.6 cm2/Vs, respectively.