Full band structure calculation of two-photon indirect absorption in bulk silicon
Full band structure calculation of two-photon indirect absorption in bulk silicon
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DOI：
10.1063/1.3570654
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发表时间：
2011-03-28
影响因子：
4
通讯作者：
Sipe, J. E.
中科院分区：
文献类型：
--
作者：
Cheng, J. L.;Rioux, J.;Sipe, J. E.
硅中的简并双光子间接吸收是限制硅结构用于电信波长的全光信息处理的重要因素。我们进行了一个完整的能带结构计算，调查在体硅双光子间接吸收，使用赝势描述的能带和绝热键电荷模型来描述声子色散和极化。我们的结果与最近的一些实验结果吻合得很好。横向声学/光学声子辅助过程占主导地位。(C)2011年美国物理学会。[doi：10.1063/1.3570654]
Degenerate two-photon indirect absorption in silicon is an important limiting effect on the use of silicon structures for all-optical information processing at telecommunication wavelengths. We perform a full band structure calculation to investigate two-photon indirect absorption in bulk silicon, using a pseudopotential description of the energy bands and an adiabatic bond charge model to describe phonon dispersion and polarization. Our results agree well with some recent experimental results. The transverse acoustic/optical phonon-assisted processes dominate. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3570654]