Epitaxial growth of room-temperature ferrimagnetic semiconductor thin films based on the ilmenite-hematite solid solution
Epitaxial growth of room-temperature ferrimagnetic semiconductor thin films based on the ilmenite-hematite solid solution
复制标题
DOI：
10.1063/1.2337276
复制
发表时间：
2006-08
影响因子：
4
通讯作者：
H. Hojo;K. Fujita;Katsuhisa Tanaka;K. Hirao
中科院分区：
文献类型：
--
作者：
H. Hojo;K. Fujita;Katsuhisa Tanaka;K. Hirao
用脉冲激光沉积法在α-Al_2O_3（0001）衬底上制备了0.7FeTiO_3·0.3Fe_2O_3固溶体外延薄膜，并对其电学和磁学性能进行了研究。在有限的沉积条件下可以获得有序相的单相：氧分压为1.0×10− 3 Pa，衬底温度为600-700°C。所沉积的膜在室温以下是半导体和亚铁磁性的，而随后在真空中退火导致居里温度高于室温。另一方面，具有无序相的薄膜似乎是反铁磁的，也是绝缘的。
Epitaxial thin films composed of 0.7FeTiO3∙0.3Fe2O3 solid solution have been prepared on α-Al2O3 (0001) substrates by a pulsed laser deposition method, and their electrical and magnetic properties have been examined. A single phase of the ordered phase can be obtained under limited deposition conditions: oxygen partial pressure of 1.0×10−3Pa and substrate temperature of 600–700°C. The as-deposited film is semiconducting and ferrimagnetic below room temperature, while subsequent annealing in vacuum leads to the Curie temperature above room temperature. On the other hand, the thin films with the disordered phase appear to be antiferromagnetic and also insulating.