Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells
Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells
复制标题
DOI：
10.1063/1.4873161
复制
发表时间：
2014-04-21
影响因子：
4
通讯作者：
Wang, T.
中科院分区：
文献类型：
--
作者：
Kim, T.;Liu, B.;Wang, T.
在二维有序 InGaN/GaN 纳米盘阵列上设计了一种“相干”纳米腔结构，其发射波长位于绿色光谱区，从而大大增强了绿色光谱区的共振模式。通过具有成本效益的纳米球光刻技术，我们在InGaN/GaN多量子阱外延片上制造了这种结构，并观察到“相干”纳米腔效应，从而提高了自发发射（SE）率。时间分辨光致发光测量证实了 SE 速率的提高。由于相干纳米腔效应，与生长的样品相比，我们的内部量子效率大幅提高了 88 倍，这对于弥合固态照明中的“绿色差距”具有重要意义。 (C) 2014 AIP 出版有限责任公司。
A "coherent" nanocavity structure has been designed on two-dimensional well-ordered InGaN/GaN nanodisk arrays with an emission wavelength in the green spectral region, leading to a massive enhancement in resonance mode in the green spectra region. By means of a cost-effective nanosphere lithography technique, we have fabricated such a structure on an InGaN/GaN multiple quantum well epiwafer and have observed the "coherent" nanocavity effect, which leads to an enhanced spontaneous emission (SE) rate. The enhanced SE rate has been confirmed by time resolved photoluminescence measurements. Due to the coherent nanocavity effect, we have achieved a massive improvement in internal quantum efficiency with a factor of 88, compared with the as-grown sample, which could be significant to bridge the "green gap" in solid-state lighting. (C) 2014 AIP Publishing LLC.