Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates
Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates
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DOI：
10.1021/nn3025173
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发表时间：
2012-08-01
期刊：
影响因子：
17.1
通讯作者：
Tsukagoshi, Kazuhito
中科院分区：
文献类型：
--
作者：
Li, Song-Lin;Miyazaki, Hisao;Tsukagoshi, Kazuhito
我们证明了量化的拉曼强度的样品和基板层在一个共同的堆叠实验配置的可能性，因此，提出了一个一般的和4激发拉曼散射快速厚度识别技术原子级层上前所未有的宽范围拉曼数据收集原子级平坦的二硫化钼薄片与理论模型进行比较。我们发现，所有的强度特征，可以准确地捕获时，包括光学干涉效应。令人惊讶的是，我们发现，即使是自由悬浮的硫属化物少层薄片有一个更强的拉曼响应比从体相。重要的是，尽管样品光谱的强度随厚度的振荡，基板加权光谱强度变得单调。结合它对样品厚度的敏感性，我们建议这个量可以用来快速确定原子层的准确厚度。
We demonstrate the possibility in quantifying the Raman intensities for both specimen and substrate layers In a common stacked experimental configuration and, consequently, propose a general and 4 Excitation Raman scattering rapid thickness identification technique for atomic-scale layers on Unprecedentedly wide-range Raman data for atomically flat MoS2 flakes are collected to compare with theoretical models. We reveal that all intensity features can be accurately captured when including optical interference effect. Surprisingly, we find that even freely suspended chalcogenide few-layer flakes have a stronger Raman response than that from the bulk phase. Importantly, despite the oscillating intensity of specimen spectrum versus thickness, the substrate weighted spectral intensity becomes monotonic. Combined with its sensitivity to specimen thickness, we suggest this quantity can be used to rapidly determine the accurate thickness for atomic layers.