The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells
The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells
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DOI：
10.1088/1674-1056/18/4/066
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发表时间：
2009-04
影响因子：
1.7
通讯作者：
Guijun Li;Guo-Fu Hou;Xiao-Yan Han;Yu-Jie Yuan;Chang-Chun Wei;S. Jian;Zhao-Bo Yin;Xin-hua Geng-Xin-h
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文献类型：
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作者：
Guijun Li;Guo-Fu Hou;Xiao-Yan Han;Yu-Jie Yuan;Chang-Chun Wei;S. Jian;Zhao-Bo Yin;Xin-hua Geng-Xin-h
本文报道了在a-Si：H/μ c-Si：H叠层太阳电池的n/p隧道复合结中，用双N层（a-Si：H/μc-Si：H）代替单晶n层（n-μc-Si：H）。通过电流-电压测量和透射率测量研究了这些隧道复合结的电输运和光学性质。新的n/p隧道复合结显示出更好的欧姆接触。此外，将n/p界面暴露于空气中，以检查氧化对隧道复合结性能的影响。当n/p结为隧道复合结时，a-Si：H/μc-Si：H叠层太阳电池的开路电压和FF都得到了提高，并且有效地防止了子电池的电流泄漏。
This paper reports that a double N layer (a-Si:H/μc-Si:H) is used to substitute the single microcrystalline silicon n layer (n-μc-Si:H) in n/p tunnel recombination junction between subcells in a-Si:H/μc-Si:H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current–voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si:H/μc-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.