Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires
Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires
复制标题
GaN 纳米线生长温度、光致发光和电阻率的相关性
DOI：
10.1063/1.2889941
复制
发表时间：
2008
影响因子：
4
通讯作者：
R. Anderson
中科院分区：
文献类型：
--
作者：
A. Talin;George T. Wang;E. Lai;R. Anderson
研究了金属催化金属有机物化学气相沉积法生长的GaN纳米线的光致发光和电输运随生长过程中衬底温度的变化。随着生长温度从800 °C升高到900 °C，纳米线的导电机制由空间电荷限制转变为欧姆输运，纳米线的电阻率从107 Ω cm下降到103 Ωcm，带边发光增加了两个数量级以上。个别纳米线的电阻率和带边发光的分数之间的强相关性进行了观察。
The photoluminescence and electrical transport of GaN nanowires grown by metal catalyzed metal-organic chemical vapor deposition were investigated as a function of substrate temperature during growth. As the growth temperature increased from 800to900°C, the electrical conduction mechanism changed from space-charge limited to ohmic transport, the nanowire resistivity dropped from ∼107to∼10−3Ωcm, and the band edge luminescence increased by more than two orders of magnitude. A strong correlation between the resistivity and the fraction of band edge luminescence for individual nanowires was observed.
影响因子：
3.2
作者：
F. Jones;F. Léonard;A. Talin;N. Bell
通讯作者：
F. Jones;F. Léonard;A. Talin;N. Bell