Low-temperature synthesis of multilayer graphene directly on SiO2 by current-enhanced solid-phase deposition using Ni catalyst
Low-temperature synthesis of multilayer graphene directly on SiO2 by current-enhanced solid-phase deposition using Ni catalyst
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DOI：
10.35848/1347-4065/ab9165
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发表时间：
2020-05
影响因子：
1.5
通讯作者：
T. Tamura;K. Ueno
中科院分区：
文献类型：
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作者：
T. Tamura;K. Ueno
低温沉积多层石墨烯（MLG）是实现多层石墨烯互连和电极等器件应用的关键问题。采用电流增强固相沉积（CE-SPD）技术，以Ni为催化剂，在退火过程中向C/Ni层施加电流，在400℃左右的低温下合成了MLG。用拉曼光谱的G/D比值表示的MLG结晶度，在相同温度下，施加电流比不施加电流提高了约4倍。随着电流的增大，G/D比提高。认为电流除了对焦耳热有促进MLG晶粒生长的作用外，还能降低合成温度。
Low-temperature deposition of multilayer graphene (MLG) directly on devices without transfer process is a critical issue for the realization of device applications of MLG such as interconnects and electrodes. Low-temperature synthesis of MLG at around 400 °C is obtained by current-enhanced solid-phase deposition (CE-SPD) using Ni as a catalyst, where current is applied to the C/Ni layer during annealing. MLG crystallinity, which is indicated by G/D ratio in Raman spectra, was improved about four times by applying current, compared to that without current at the same temperature. As the current increases, the G/D ratio is improved. It is considered that current has an effect in enhancing the grain-growth of MLG besides Joule’s heat and it leads to lower synthesis temperature.