Effects of thermal annealing of ZnO layers grown by MBE
Effects of thermal annealing of ZnO layers grown by MBE
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DOI：
10.1016/s0022-0248(00)00099-3
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发表时间：
2000-06-01
影响因子：
1.8
通讯作者：
Matsushige, K
中科院分区：
文献类型：
--
作者：
Ogata, K;Sakurai, K;Matsushige, K
在N-2或O-2气氛中对氧化锌层进行了热退火，并研究了它们的影响。ZnO在N-2气氛中退火后O的再蒸发使载流子密度增大。相反，在O-2气氛中低温退火后，其光学性能从10(18)~ 10(17)cm（-3）量级减小，光学性能也得到改善。在这种情况下，间隙Zn （Zn-i）和O空位（V-O）的数量减少，可能是因为O原子的有效结合降低了这些供体水平。结晶度也随着退火而提高。随着退火温度的升高，该层的迁移率最高可达51 cm(2)/V s，但在较低温度下迁移率较低。解决了这一问题，退火可能成为制备p型ZnO层的一种很有前途的技术。(C) 2000 Elsevier Science B.V.版权所有
Thermal annealing of ZnO layers was done in N-2 or O-2 atmosphere and their effects were studied. Electron carrier density increases according to reevaporation of O from ZnO if annealed in N-2 atmosphere. On the contrary, it decreases from the order of 10(18) to 10(17) cm(-3) and also optical properties are improved when annealed in O-2 atmosphere at lower temperature. In that case, the number of interstitial Zn (Zn-i) and O vacancies (V-O) decrease, probably because the effective incorporation of O atom diminishes those donor levels. The crystallinity also improves with the annealing. The mobilities of the layer increase up to 51 cm(2)/V s as annealing temperature increases, but are lower at lower temperatures. Solving this problem, annealing may become a promising technique for the fabrication of p-type ZnO layers. (C) 2000 Elsevier Science B.V. All rights reserved.