Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions
Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions
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DOI：
10.1063/1.1323550
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发表时间：
2000-11
影响因子：
4
通讯作者：
Joshua M. Pearce;R. Koval;A. Ferlauto;R. Collins;C. Wronski;Jeffrey Yang;S. Guha
中科院分区：
文献类型：
--
作者：
Joshua M. Pearce;R. Koval;A. Ferlauto;R. Collins;C. Wronski;Jeffrey Yang;S. Guha
氢化非晶硅 (a-Si:H) p-i-n 和 n-i-p 太阳能电池的 p/i 界面区域和体载流子复合对暗电流-电压 (JD-V) 和短路电流-开路电压 (Jsc-Voc) 特性的贡献已被分离、识别和量化。本文介绍和讨论的结果表明，给定散装材料的最大 1 sun Voc 可以从低光照强度下以散装为主的 Jsc-Voc 特性有效推断出来。
Contribution of carrier recombination from the p/i interface regions and the bulk to the dark current–voltage (JD–V) and short-circuit current–open-circuit voltage (Jsc–Voc) characteristics of hydrogenated amorphous-silicon (a-Si:H) p–i–n and n–i–p solar cells have been separated, identified, and quantified. Results are presented and discussed here which show that a maximum 1 sun Voc for a given bulk material can be validly extrapolated from bulk dominated Jsc–Voc characteristics at low illumination intensities.