Study on the lifetime of Mo/Si multilayer optics with pulsed EUV-source at the ETS
Study on the lifetime of Mo/Si multilayer optics with pulsed EUV-source at the ETS
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ETS 脉冲 EUV 源 Mo/Si 多层光学器件寿命研究
DOI：
10.1117/12.891803
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
M. Schürmann
中科院分区：
文献类型：
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作者：
M. Schürmann;S. Yulin;V. Nesterenko;T. Feigl;N. Kaiser;B. Tkachenko;M. Schürmann
随着极紫外光刻进入生产阶段，实际条件下光学元件的污染和清洗的研究变得越来越重要。由于这一事实，Xtreme Technologies GmbH与Fraunhofer IOF合作并在英特尔公司的财政支持下建造了一个暴露测试台(ETS)。该测试台配备了脉冲DPP源，可同时曝光多个样品。在标准设置中，每个样品曝光面积大于35mm2的四个样品可以以0.25 mW/mm2的均匀强度曝光。ETS最近的一次更新允许同时曝光两个强度高达1.0 mW/mm2的样品。该替代装置的第一个应用是脉冲源的EUV辐射引起的碳污染率与准连续同步辐射引起的污染率的比较研究。改进的气体入口系统允许将第二气体引入曝光室。利用这一可能性考察了不同混合气体对EUV诱导清洗效率的影响。特别研究了在清洗气体中添加第二种气体对EUV诱导清洗的强化作用。
As EUV lithography is on its way into production stage, studies of optics contamination and cleaning under realistic conditions become more and more important. Due to this fact an Exposure Test Stand (ETS) has been constructed at XTREME technologies GmbH in collaboration with Fraunhofer IOF and with financial support of Intel Corporation. This test stand is equipped with a pulsed DPP source and allows for the simultaneous exposure of several samples. In the standard set-up four samples with an exposed area larger than 35 mm2 per sample can be exposed at a homogeneous intensity of 0.25 mW/mm2. A recent update of the ETS allows for simultaneous exposures of two samples with intensities up to 1.0 mW/mm2. The first application of this alternative set-up was a comparative study of carbon contamination rates induced by EUV radiation from the pulsed source with contamination rates induced by quasicontinuous synchrotron radiation. A modified gas-inlet system allows for the introduction of a second gas to the exposure chamber. This possibility was applied to investigate the efficiency of EUV-induced cleaning with different gas mixtures. In particular the enhancement of EUV-induced cleaning by addition of a second gas to the cleaning gas was studied.