Scanning gate microscopy in a viscous electron fluid
Scanning gate microscopy in a viscous electron fluid
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DOI：
10.1103/physrevb.98.241304
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发表时间：
2018-12-21
影响因子：
3.7
通讯作者：
Ensslin, K.
中科院分区：
文献类型：
--
作者：
Braem, B. A.;Pellegrino, F. M. D.;Ensslin, K.
我们在32 mK和30 K之间的温度下测量了通过Ga [Al] As异质结构的输运。温度升高会增强电子-电子散射率，二维电子气中出现粘性效应。为了探测这种制度，我们测量所谓的附近电压，并使用电压偏置的扫描尖端，以引起可移动的局部扰动。我们发现，扫描门图像区分可靠的不同制度的电子传输。我们的数据是在良好的协议与最近的理论相互作用的电子液体在弹道和粘性制度的石墨烯测量刺激。然而，在Ga [Al] As中可观察到粘性效应的温度和密度范围与石墨烯材料系统非常不同。
We measure transport through a Ga[Al]As heterostructure at temperatures between 32 mK and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To probe this regime we measure so-called vicinity voltages and use a voltage-biased scanning tip to induce a movable local perturbation. We find that the scanning gate images differentiate reliably between the different regimes of electron transport. Our data are in good agreement with recent theories for interacting electron liquids in the ballistic and viscous regimes stimulated by measurements in graphene. However, the range of temperatures and densities where viscous effects are observable in Ga[Al]As are very distinct from the graphene material system.