Ferromagnetic Schottky junctions using diamond semiconductors
Ferromagnetic Schottky junctions using diamond semiconductors
复制标题
DOI：
10.3379/msjmag.1206r006
复制
发表时间：
2012-05
影响因子：
--
通讯作者：
T. Soumiya;K. Ueda;N. Fukatani;T. Miyawaki;H. Asano
中科院分区：
文献类型：
--
作者：
T. Soumiya;K. Ueda;N. Fukatani;T. Miyawaki;H. Asano
摘要用不同的铁磁性金属和合金在氢端(H端)金刚石表面制备了肖特基结，并对其界面特性进行了评价。得到了这些结的肖特基势垒高度(ϕB)与功函数的关系，表明可以通过选择具有合适功函数的金属来控制氢端金刚石和铁磁性金属之间的肖特基势垒高度。在5 eV以上具有较高功函数的Ni和NiFe的ϕB低于其他铁磁性金属的ϕB。这些结果表明，具有较高功函数的铁磁性金属有望用于金刚石半导体的自旋注入。
Abstract Schottky junctions, formed using various ferromagnetic metals and alloys, were fabricated on hydrogen-terminated (H-terminated) diamond, and their interfacial characteristics were evaluated. A clear work function dependence of the Schottky barrier height (ϕB) was obtained for these junctions, indicating that the Schottky barrier height between H-terminated diamond and ferromagnetic metals can be controlled by selecting metals with appropriate work functions. ϕB for Ni and NiFe, which have higher work functions above 5 eV, is lower than ϕB for other ferromagnetic metals. These results indicate that ferromagnetic metals with higher work function are promising for spin injection into diamond semiconductors.