Bootstrapped ring oscillator with propagation delay time below 1.0 nsec/stage by standard 0.5µm bottom-gate amorphous Ga2O3-In2O3-ZnO TFT technology
Bootstrapped ring oscillator with propagation delay time below 1.0 nsec/stage by standard 0.5µm bottom-gate amorphous Ga2O3-In2O3-ZnO TFT technology
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DOI：
10.1109/iedm.2008.4796619
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发表时间：
2008-12
期刊：
影响因子：
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通讯作者：
H. Yin;Sunil Kim;C. J. Kim;J. Park;I. Song;Sangwook Kim;Sung-Hoon Lee;Young-soo Park
中科院分区：
文献类型：
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作者：
H. Yin;Sunil Kim;C. J. Kim;J. Park;I. Song;Sangwook Kim;Sung-Hoon Lee;Young-soo Park
本文介绍了高性能的环形振荡器的设计和制作与标准的0.5 μ m底栅非晶Ga 2 O3-In 2 O3-ZnO TFT技术。为了减小电路信号的传输延迟，对器件的工艺参数和几何参数进行了优化，提出了一种利用负载晶体管的重叠电容作为自举电容的新型3 TFT自举反相器结构。最后，在9 V的电源电压下，在5级环形振荡器中实现了0.94 ns/级的传播延迟时间，比以前的报告快75倍以上。
This paper describes the design and fabrication of the high performance ring oscillator with the standard 0.5 mum bottom-gate amorphous Ga2O3-In2O3-ZnO TFT technology. A series of process and geometry parameters of devices are sophistically optimized to decrease the circuit signal's propagation delay and, in particular, a novel 3 TFTs bootstrapped inverter structure using the load-transistor's overlap capacitance as the bootstrapped capacitor is applied. Finally, the propagation delay time of 0.94 ns/stage for a supply voltage of 9 V is achieved in the 5-stage ring oscillator, which is over 75 times faster than previous report.