Intrinsic origin of electron scattering at the 4H-SiC(0001)/SiO2 interface
Intrinsic origin of electron scattering at the 4H-SiC(0001)/SiO2 interface
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4H-SiC(0001)/SiO2 界面电子散射的本质起源
DOI：
10.1103/physrevb.95.041302
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
T. Ono
中科院分区：
文献类型：
--
作者：
S. Iwase;C. J. Kirkham;T. Ono
我们引入第一性原理研究来阐明载流子散射特性。有趣的是，即使没有电活性缺陷，氧的引入也会显著影响导带边缘的电子传输。用内空间态(ISSS)的行为解释了大散射的起源。此外，ISSS的影响大于电活性碳相关缺陷的影响。这一结果表明，在常规情况下没有考虑的额外散射发生在。
We introduce a first-principles study to clarify the carrier-scattering property at the. Interestingly, the electron transport at the conduction-band edge is significantly affected by the introduction of oxygen, even though there are no electrically active defects. The origin of the large scattering is explained by the behavior of the internal-space states (ISSs). Moreover, the effect of the ISSs is larger than that of the electrically active carbon-related defects. This result indicates that an additional scattering not considered in a conventionaloccurs at the.