Formation of p-n homojunctions in n-ZnO bulk single crystals by diffusion from a Zn3P2 source
Formation of p-n homojunctions in n-ZnO bulk single crystals by diffusion from a Zn3P2 source
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DOI：
10.1063/1.2137988
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发表时间：
2005-11
影响因子：
4
通讯作者：
Soohwan Jang;Jau-Jiun Chen;B. S. Kang;F. Ren;D. Norton;S. Pearton;J. Lopata;W. Hobson
中科院分区：
文献类型：
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作者：
Soohwan Jang;Jau-Jiun Chen;B. S. Kang;F. Ren;D. Norton;S. Pearton;J. Lopata;W. Hobson
通过在封闭安瓿系统中从 Cd3P2、砷和红磷掺杂剂源扩散 P，在轻 n 型 (1017cm−3) 块状单晶 ZnO 基板中形成 p-n 结。通过二次离子质谱分析测定，在 550°C 扩散 30 分钟后，发现 P 掺入深度为 ∼200nm。所得结构显示出整流作用，在 +3∕−5V 时开关电流比为 ∼70。正向电流理想因子为⩾2，与结中存在的多种电流传输机制一致，例如缺陷辅助隧道效应和空间电荷区域中通过中能带深能级的传统载流子复合。 300K 时，正向导通电压 VF 约为 4V，比导通电阻 (RON) 约为 21mΩcm2。低正向偏压下正向电流的激活能为~1.4eV。这也与空间电荷区域中载流子通过中能带深能级的复合一致。
p-n junctions have been formed in lightly n-type (1017cm−3) bulk, single-crystal ZnO substrates by diffusion of P from a Cd3P2, arsenic and red phosphorous dopant source in a closed-ampoule system. The P incorporation depth was found to be ∼200nm after diffusion at 550°C for 30min, as determined by secondary ion mass spectrometry profiling. The resulting structures show rectification, with on-off current ratios of ∼70 at +3∕−5V. The forward current ideality factor was ⩾2, consistent with multiple current transport mechanisms present in the junction, such as defect-assisted tunneling and conventional carrier recombination in the space-charge region via midgap deep levels. The forward turn-on voltage, VF was ∼4V at 300K with a specific on-state resistance (RON) of ∼21mΩcm2. The activation energy of the forward current at low forward biases was ∼1.4eV. This is also consistent with carrier recombination in the space charge region via a midgap deep level.