Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
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DOI：
10.1143/jjap.47.5426
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发表时间：
2008-07
影响因子：
1.5
通讯作者：
Kimihito Ooyama;H. Kato;M. Miczek;T. Hashizume
中科院分区：
文献类型：
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作者：
Kimihito Ooyama;H. Kato;M. Miczek;T. Hashizume
结合静态电容-电压（C-V）和电容瞬态（C-t）方法，在23 ~ 300 °C温度范围内研究了Al 2 O3/n-GaN结构的界面态响应.我们观察到显着的退化的静态C-V曲线在高温下测量，所产生的增强充电/放电速率的界面态在更深的能量内的GaN的带隙。在高温下，随时间变化的电容也出现了更快的响应和更大的幅度。通过对C-t结果的简单分析，我们估计态的俘获截面为10-19 cm 2量级。
With a combination of the static capacitance–voltage (C–V) and the capacitance transient (C–t) methods, the interface-state response in an Al2O3/n-GaN structure was investigated at temperatures ranging from 23 to 300 °C. We observed pronounced degradation of the static C–V curves measured at high temperatures, arising from the enhancement of charging/discharging rates of interface states at deeper energies within the bandgap of GaN. Faster responses with larger magnitudes also appeared in the time-dependent capacitance at high temperatures. From a simple analysis of the C–t results, we estimated the capture cross section of the states to be on the order of 10-19 cm2.