Preparation of microcrystalline silicon-carbon films
Preparation of microcrystalline silicon-carbon films
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DOI：
10.1016/j.solmat.2004.09.015
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发表时间：
2005-05-01
影响因子：
6.9
通讯作者：
Tucci, M
中科院分区：
文献类型：
--
作者：
Coscia, U;Ambrosone, G;Tucci, M
研究了放电参数对PECVD系统沉积的氢化硅碳膜性能的影响。在较低的射频功率下生长了氢化微晶硅-碳薄膜。当射频功率从5W增加到25W时，结晶度降低，碳含量从0.025增加到0.10.光学能隙在1.86-1.96 eV范围内可调，暗电导下降约三个数量级。在所研究的压力范围(1.7-2.9托)内，微晶样品表现出大致相同的光学和电学性质。具有高暗电导率的微晶薄膜呈现n型特征，用这些材料制备的微单晶硅异质结具有整流行为。(C)2004爱思唯尔B.V.保留所有权利。
The effects of discharge parameters on the properties of hydrogenated silicon-carbon films deposited by PECVD system have been investigated. Hydrogenated microcrystalline silicon-carbon films have been grown at low RF power. The increase in RF power from 5 to 25 W leads to a decrease of the crystallinity degree and an enhancement of the carbon content from 0.025 to 0.10. The optical energy gap can be tuned in the 1.86-1.96 eV range and the dark conductivity decreases by about three orders of magnitude. In the investigated pressure range (1.7-2.9 Torr) microcrystalline samples show approximately the same optical and electrical properties. Microcrystalline films with high dark conductivity present an n-type character and the micro-mono crystalline silicon heterostuctures fabricated with these materials reveal a rectifying behaviour of the junctions. (c) 2004 Elsevier B.V. All rights reserved.