Takeo Ushiki, Kunihiro Kawai, Ichiro Ohshima, and Tadahiro Ohmi: "Chemical Reaction Concerns of Gate Metal with Gate Dielectric in Ta Gate MOS Devices : An Effect Of Self-Sealing Barrier Configuration Interposed Between Ta and SiO2"IEEE Trans.on Electron
Takeo Ushiki, Kunihiro Kawai, Ichiro Ohshima, and Tadahiro Ohmi: "Chemical Reaction Concerns of Gate Metal with Gate Dielectric in Ta Gate MOS Devices : An Effect Of Self-Sealing Barrier Configuration Interposed Between Ta and SiO2"IEEE Trans.on Electron
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Takeo Ushiki、Kunihiro Kawai、Ichiro Ohshima 和 Tadahiro Ohmi：“Ta 栅极 MOS 器件中栅极金属与栅极电介质的化学反应问题：Ta 和 SiO2 之间插入的自密封势垒配置的影响”IEEE Trans.on Electron
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