Electron-beam induced initial growth of platinum films using Pt(PF3)4
Electron-beam induced initial growth of platinum films using Pt(PF3)4
复制标题
DOI：
10.1116/1.1761266
复制
发表时间：
2004-07
影响因子：
1.4
通讯作者：
S. Wang;Y. Sun;Q. Wang;J. White
中科院分区：
文献类型：
--
作者：
S. Wang;Y. Sun;Q. Wang;J. White
Using an organometallic precursor, tetrakis(trifluorophosphine)platinum [Pt(PF3)4], electron-beam induced deposition of Pt thin films on a Cr-coated Si(100) substrate was investigated. Based on Auger electron spectroscopy, the Pt content reached 60 at. % for a 3 kV e-beam flux of 2.1×10−2 A cm−2, a precursor pressure of 2×10−5 Torr, and a substrate temperature of 80 °C. As the flux ratio (e-beam/precursor) increased above the optimized value of 10, the rate shifted from control by the e-beam flux to the precursor flux. The phosphorus content was reduced by adding O2.
