Plasma etched polycrystalline hot‐filament chemical vapor deposited diamond thin films and their electrical characteristics
Plasma etched polycrystalline hot‐filament chemical vapor deposited diamond thin films and their electrical characteristics
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等离子体蚀刻多晶热丝化学气相沉积金刚石薄膜及其电学特性
DOI：
10.1063/1.112578
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发表时间：
1994
影响因子：
4
通讯作者：
M. Prelas
中科院分区：
文献类型：
--
作者：
B. Liaw;T. Stacy;G. Zhao;E. Charlson;E. Charlson;J. M. Meese;M. Prelas
研究了利用低能离子辐照对热灯丝、化学气相沉积的金刚石薄膜的蚀刻。本研究中使用的薄膜是沉积在p型（100）取向硅衬底上的硼掺杂多晶金刚石。使用具有氧等离子体的低电压直流电晕放电来溅射蚀刻膜。表面进行了研究，扫描电子显微镜和轮廓。蚀刻速率为约500 A/min，这取决于各种处理条件。In/金刚石/Si肖特基二极管的特性被用来评估各种处理的金刚石表面的电性能。结果表明，等离子体刻蚀可以显着影响肖特基器件的特性。
Etching of hot‐filament, chemical vapor deposited, diamond thin films utilizing low energy ion irradiation was investigated. The films used in this study were boron doped polycrystalline diamond, deposited on p‐type (100) oriented silicon substrates. A low voltage dc corona discharge with an oxygen plasma was used to sputter etch the films. Surfaces were investigated by scanning electron microscopy and profilometry. Etch rates were approximately 500 A/min, depending on the various processing conditions. Characteristics of In/diamond/Si Schottky diodes were used to evaluate the electrical properties of diamond surfaces with various treatments. Results indicate that plasma etching can significantly affect Schottky device characteristics.