Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer
Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer
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DOI：
10.1557/jmr.2004.0346
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发表时间：
2004-09
影响因子：
2.7
通讯作者：
A. Sasaki;Jin Liu;W. Hara;S. Akiba;Keisuke Sauto;T. Yodo;M. Yoshimoto
中科院分区：
文献类型：
--
作者：
A. Sasaki;Jin Liu;W. Hara;S. Akiba;Keisuke Sauto;T. Yodo;M. Yoshimoto
采用外延NiO超薄缓冲层(约6 nm厚)，采用脉冲激光沉积技术在蓝宝石(0001)衬底上实现了AlN薄膜的室温外延。四圆X-射线衍射分析表明，晶体为AlN(0001)/NiO(111)/蓝宝石(0001)双异质外延结构，外延关系为AlN[10-10]||NiO[11-2]||蓝宝石[11-20]。结果表明，室温下生长的AlN薄膜表面呈原子级光滑的纳米骨状结构，反映出超光滑蓝宝石衬底表面具有0.2 nm的台阶。
Room-temperature epitaxy of AlN thin films on sapphire (0001) substrates was achieved by pulsed laser deposition using an epitaxial NiO ultrathin buffer layer (approximately 6 nm thick). Four-circle x-ray diffraction analysis indicates a double heteroepitaxial structure of AlN (0001)/NiO(111)/sapphire (0001) with the epitaxial relationship of AlN [10-10] || NiO [11-2] || sapphire [11-20]. The surface morphology of room-temperature grown AlN thin films was found to be atomically smooth and nanostepped, reflecting the surface of the ultrasmooth sapphire substrate with 0.2-nm-high steps.