Atomic level control of association-dissociation behavior of In impurities in polycrystalline ZnO
Atomic level control of association-dissociation behavior of In impurities in polycrystalline ZnO
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DOI：
10.1103/physrevmaterials.6.063801
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发表时间：
2022-06-01
影响因子：
3.4
通讯作者：
Ohkubo, Y.
中科院分区：
文献类型：
--
作者：
Sato, W.;Takata, M.;Ohkubo, Y.
在目前的工作中，我们成功地通过多步掺杂方法控制了引入多晶ZnO中的热激活In杂质的缔合-解离过程。通过使用 In-111(-> Cd-111) 探针的时间微分扰动角相关光谱，在原子尺度上监测 In 离子的热行为和最终驻留位置。目前在空气和真空中组合热处理的掺杂方法能够将大部分 0.5 at.% In 施主引入到无缺陷的替代 Zn 位点中。结果表明，含In的ZnO样品的电导率与替代Zn位点的In供体浓度之间存在明显的正相关性，与未掺杂的ZnO相比，电导率高达五个数量级。
In the present work, we have succeeded in controlling association-dissociation process of thermally activated In impurities introduced in polycrystalline ZnO by a multistep doping method. The thermal behavior and eventual residential sites of In ions were monitored on an atomic scale by means of time-differential perturbed angular correlation spectroscopy with the In-111(-> Cd-111) probe. The present doping method of combined heat treatments in air and in vacuum enabled the introduction of a great fraction of 0.5 at.% In donors into defect-free substitutional Zn sites. It was demonstrated that the In-containing ZnO samples show a clear positive correlation between the electrical conductivity and the concentration of In donors at substitutional Zn sites, achieving a conductivity as high as five orders of magnitude compared with undoped ZnO.