Magnesium oxide as a candidate high-κ gate dielectric
Magnesium oxide as a candidate high-κ gate dielectric
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DOI：
10.1063/1.2191419
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发表时间：
2006-04
影响因子：
4
通讯作者：
Liang Yan;C. Lopez;R. Shrestha;E. Irene;A. Suvorova;M. Saunders
中科院分区：
文献类型：
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作者：
Liang Yan;C. Lopez;R. Shrestha;E. Irene;A. Suvorova;M. Saunders
采用镁靶溅射法在硅衬底上制备了具有尖锐界面的氧化镁薄膜。使用光谱椭圆偏振法和透射电子显微镜表征膜堆叠，并确定膜静态介电常数（κ）和界面陷阱。由于皮下Si氧化，在MgO scinSi界面处发现了非晶SiO2层。发现MgO膜的κ约为SiO2的两倍，并且发现MgO scinSi的界面陷阱密度与SiO2 scinSi相当，使得MgO与目前认为的所有高κ κ的材料竞争。
Magnesium oxide (MgO) thin films with sharp interfaces were deposited by sputtering of a Mg target on Si. The film stack was characterized using spectroscopic ellipsometry and transmission electron microscopy and the film static dielectric constant (κ) and interface traps were determined. An amorphous SiO2 layer was found at the MgO∕Si interface as a result of subcutaneous Si oxidation. κ for the MgO films was found to be about twice that of SiO2, and the interface trap densities of MgO∕Si were found to be comparable with SiO2∕Si, rendering MgO competitive with all presently considered high-κ dielectrics.