Thermoelectric properties of heavily boron- and phosphorus-doped silicon
Thermoelectric properties of heavily boron- and phosphorus-doped silicon
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DOI：
10.7567/jjap.54.071301
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发表时间：
2015-07-01
影响因子：
1.5
通讯作者：
Tada, Tetsuya
中科院分区：
文献类型：
--
作者：
Ohishi, Yuji;Xie, Jun;Tada, Tetsuya
近年来，纳米结构热电材料引起了人们的广泛关注。然而，尽管人们越来越关注单晶硅的热电性能，但有关单晶硅热电性能的现有信息非常有限，特别是在高温下高掺杂浓度的情况下。本文研究了重掺杂(10(18)-10(20)cm(-3))n型和p型单晶硅从室温到1000K以上的热电性质，由电导率、塞贝克系数和热导率的测量数据计算了优值系数ZT。室温下，n型和p型硅的最大ZT值分别为0.015和0.008。为了更好地理解载流子和声子的输运，并预测硅的热电性质，我们基于弛豫时间近似的玻耳兹曼输运方程建立了一个简单的理论模型。(C)2015年日本应用物理学会
In recent years, nanostructured thermoelectric materials have attracted much attention. However, despite this increasing attention, available information on the thermoelectric properties of single-crystal Si is quite limited, especially for high doping concentrations at high temperatures. In this study, the thermoelectric properties of heavily doped (10(18) - 10(20) cm(-3)) n- and p-type single-crystal Si were studied from room temperature to above 1000 K. The figures of merit, ZT, were calculated from the measured data of electrical conductivity, Seebeck coefficient, and thermal conductivity. The maximum ZT values were 0.015 for n-type and 0.008 for p-type Si at room temperature. To better understand the carrier and phonon transport and to predict the thermoelectric properties of Si, we have developed a simple theoretical model based on the Boltzmann transport equation with the relaxation-time approximation. (C) 2015 The Japan Society of Applied Physics