Anodic process for forming nanostructured metal-oxide coatings for large-value precise microfilm resistor fabrication
Anodic process for forming nanostructured metal-oxide coatings for large-value precise microfilm resistor fabrication
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DOI：
10.1016/s0013-4686(99)00096-1
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发表时间：
1999-01-01
影响因子：
6.6
通讯作者：
Magaino, S
中科院分区：
文献类型：
--
作者：
Mozalev, A;Surganov, A;Magaino, S
纳米尺度的金属氧化物涂层已经从双层Ta-Al膜组合通过阳极氧化底层钽通过在初始形成的阳极氧化铝中的孔产生。通过扫描电子显微镜和俄歇电子能谱对所开发的涂层进行了研究，并将其作为微膜电阻器制造的替代材料进行了检验。发现周期性网状结构和纳米级形貌的涂层导致高的薄层电阻（至75 k Ω/平方）以及低的温度电阻系数（在10（-5）K-1的数量级）。这种现象被解释为存在于薄膜中的特定的量子机制所造成的金属-绝缘体组合物和超细周期性结构的涂层在这里开发。额外的电化学处理允许在不改变电阻器设计几何形状的情况下，将电阻器精确调整30%至所需值的1%以内。(C)1999 Elsevier Science Ltd.保留所有权利。
Nanoscale metal-oxide coatings have been produced from double layer Ta-Al film combinations by anodizing underlying tantalum through pores in an initially formed anodic alumina. The coatings developed have been studied by SEM and AES and examined as alternative materials for microfilm resistor fabrication. Periodical net-like structure and nanoscale topography of the coatings were found to result in high sheet resistance (to 75 k Omega/square) as well as low temperature resistance coefficient (in the order of 10(-5) K-1). The phenomena are explained by existence in the films of specific quantum mechanisms caused by metal-insulator composition and ultra-fine periodical structure of the coatings developed here. Additional electrochemical treatment allows precise resistor adjustment of 30% to within 1% of desired value without changes in resistor design geometry. (C) 1999 Elsevier Science Ltd. All rights reserved.