On the validity of conventional MOSFET nonlinearity characterization at RF switching
On the validity of conventional MOSFET nonlinearity characterization at RF switching
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RF 开关时传统 MOSFET 非线性表征的有效性
DOI：
10.1109/lmwc.2006.869859
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发表时间：
2006
影响因子：
3
通讯作者：
S. Miyamoto
中科院分区：
文献类型：
--
作者：
D. Navarro;Y. Takeda;M. Miura;H. Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto
我们分析了金属氧化物半导体场效应晶体管（MOSFET）在射频开关使用传统的提取方法IP3，测量的谐波失真（HD），和基于表面电位的MOSFET模型的电路仿真的线性度。还研究了低频下IP3的常规提取方法在高频下代表IP3的适用性。在低频，测量的HD特性和提取的IP3值对应于采用准静态近似的模型的预测，即，假设瞬时载波响应。在截止频率的一半以上，载流子响应延迟增强了MOSFET的非线性，这表现为一阶谐波的减少和三阶谐波的显著曲率。因此，从线性外推的第一和第三谐波的交点提取IP3值的传统方法变得不可靠
We analyze the linearity of metal oxide semiconductor field effect transistors (MOSFETs) at radio frequency switching using the conventional extraction method of IP3, measured harmonic distortion (HD), and a surface-potential-based MOSFET model for circuit-simulation. The applicability of the conventional extraction method of IP3 at low frequency to represent IP3 at high frequency is also investigated. At low frequency, measured HD characteristics and extracted IP3 values correspond to the prediction by the model which adopts the quasistatic approximation, i.e., instantaneous carrier response is assumed. Beyond half of the cutoff frequency, the carrier response delay enhances the MOSFET nonlinearity, which is manifested by a decreased first order harmonic and a pronounced curvature of the third order harmonic. Consequently, the conventional extraction method of IP3 value from the intersection point of linearly extrapolated first and third harmonics becomes unreliable