Reverse graded relaxed buffers for high Ge content SiGe virtual substrates
Reverse graded relaxed buffers for high Ge content SiGe virtual substrates
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DOI：
10.1063/1.3023068
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发表时间：
2008-11-10
影响因子：
4
通讯作者：
Leadley, D. R.
中科院分区：
文献类型：
--
作者：
Shah, V. A.;Dobbie, A.;Leadley, D. R.
提出了一种在Si(001)衬底上外延生长高Ge含量、弛豫Si(1-x)Ge(X)缓冲层的新方法。通过化学气相沉积生长这种结构及其表征，证明了该技术的优点。首先在衬底上生长松弛的Ge，然后采用反向分级方法以达到0.78的最终缓冲成分。优化后的缓冲层厚度仅为2.8微米，表面穿通位错密度为4×10(6)cm(-2)，表面粗糙度为2.6 nm。缓冲器显示出高达107%的松弛。
An innovative approach is proposed for epitaxial growth of high Ge content, relaxed Si(1-x)Ge(x) buffer layers on a Si(001) substrate. The advantages of the technique are demonstrated by growing such structures via chemical vapor deposition and their characterization. Relaxed Ge is first grown on the substrate followed by the reverse grading approach to reach a final buffer composition of 0.78. The optimized buffer structure is only 2.8 mu m thick and demonstrates a low surface threading dislocation density of 4x10(6) cm(-2), with a surface roughness of 2.6 nm. The buffers demonstrate a relaxation of up to 107%.