Polytype formation in GaAs/GaP axial nanowire heterostructures
Polytype formation in GaAs/GaP axial nanowire heterostructures
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DOI：
10.1016/j.jcrysgro.2011.07.021
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发表时间：
2011-10-01
影响因子：
1.8
通讯作者：
LaPierre, Ray R.
中科院分区：
文献类型：
--
作者：
Boulanger, Jonathan P.;LaPierre, Ray R.
透射电子显微镜（TEM）研究了au辅助气液固（VLS）纳米线生长的砷化镓/磷化镓（GaAs/GaP）轴向异质结构。在MBE生长过程中，液态Au-III-V合金液滴的过饱和对纳米线异质结构的晶相和生长速度都有深远的影响。在这些影响中，出现了以前未报道过的4H GaP晶体相。4H GaP发生在低Au-III-V液滴过饱和时，从GaAs到GaP生长转变。GaAs和GaP的晶相和生长速率都不同，这表明V族元素在Au-III-V液滴过饱和和VLS纳米线生长中的重要性。(C) 2011 Elsevier B.V.版权所有
Transmission electron microscopy (TEM) studies are presented for Au-assisted vapor-liquid-solid (VLS) nanowire growth of gallium arsenide/gallium phosphide (GaAs/GaP) axial heterostructures. The supersaturation of the liquid Au-III-V alloy droplet during MBE growth was found to have a profound impact on both the crystal phase and growth rate of the nanowire heterostructures. Among these effects was the appearance of a previously unreported 4H GaP crystal phase. 4H GaP occurred at low Au-III-V droplet supersaturation following the transition from GaAs to GaP growth. Both crystal phase and growth rate were different for GaAs and GaP, underlining the importance of group V elements in Au-III-V droplet supersaturation and thus VLS nanowire growth. (C) 2011 Elsevier B.V. All rights reserved.