High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors
High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors
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DOI：
10.1109/led.2019.2942967
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发表时间：
2019-09
影响因子：
4.9
通讯作者：
Jiangwei Liu;T. Teraji;B. Da;Y. Koide
中科院分区：
文献类型：
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作者：
Jiangwei Liu;T. Teraji;B. Da;Y. Koide
肖特基二极管和金属半导体场效应晶体管 (MESFET) 制造在相当光滑且高硼掺杂水平的金刚石外延层上。肖特基二极管的正向电流密度最大值为 0.6 A cm−2，开/关比高于 108。硼掺杂金刚石上 Pt 金属的理想因子和势垒高度分别评估为 1.07 和 1.38 eV。 MESFET 的漏极电流最大值为 −0.55mA mm−1，比之前的报告高出九倍。其起源可能归因于 B 金刚石良好的表面质量和高硼浓度。
Schottky diodes and metal-semiconductor field-effect transistors (MESFETs) are fabricated on a quite smooth and high boron doping level diamond epitaxial layer. Forward current density maximum for the Schottky diode is 0.6 A cm−2 with the on/off ratio higher than 108. Ideality factor and barrier height for Pt metal on the boron-doped diamond are evaluated to be 1.07 and 1.38 eV, respectively. Drain current maximum for the MESFET is −0.55mA mm−1, which is nine times higher than that of the previous report. Origin of it is possibly attributed to the good surface quality and high boron concentration for the B-diamond.