Radiative lifetimes of single excitons in semiconductor quantum dots - manifestation of the spatial coherence effect
Radiative lifetimes of single excitons in semiconductor quantum dots - manifestation of the spatial coherence effect
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DOI：
10.1016/s0038-1098(00)00483-x
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发表时间：
2001-01-01
影响因子：
2.1
通讯作者：
Petroff, PM
中科院分区：
文献类型：
--
作者：
Dekel, E;Regelman, DV;Petroff, PM
使用时间相关的单光子计数与温度相关的衍射限制共焦光致发光光谱相结合，我们首次准确地确定了限制在半导体量子点内的单激子的本征辐射寿命。它们的寿命比限制在具有可比限制尺寸的半导体量子线（阱）中的单激子的本征辐射寿命长一（两个）数量级。我们根据受限激子偶极矩与辐射电磁场之间空间相干性的降低来定量解释这种长辐射时间。 (C) 2001 Elsevier Science Ltd. 保留所有权利。
Using time correlated single photon counting combined with temperature dependent diffraction limited confocal photoluminescence spectroscopy we accurately determine, for the first time, the intrinsic radiative lifetime of single excitons confined within semiconductor quantum dots. Their lifetime is one (two) orders of magnitude longer than the intrinsic radiative lifetime of single excitons confined in semiconductor quantum wires (wells) of comparable confining dimensions. We quantitatively explain this long radiative time in terms of the reduced spatial coherence between the confined exciton dipole moment and the: radiation electromagnetic field. (C) 2001 Elsevier Science Ltd. All rights reserved.