Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties
Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties
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DOI：
10.1063/5.0050802
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发表时间：
2021-08
影响因子：
3.2
通讯作者：
A. Goswami;B. Markman;S. Brunelli;S. Chatterjee;J. Klamkin;M. Rodwell;C. Palmstrøm
中科院分区：
文献类型：
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作者：
A. Goswami;B. Markman;S. Brunelli;S. Chatterjee;J. Klamkin;M. Rodwell;C. Palmstrøm
模板辅助选择性区域生长技术由于其在预制电介质模板中生长外延材料的能力而得到普及。限制外延横向过生长（CELO）是一种这样的技术，其使用电介质模板来限定生长的纳米结构的几何形状。两个终端的低温磁输运测量被用来确定电子性能。对于掺杂的In0.53Ga0.47As CELO纳米结构，我们观察到舒布尼科夫-德哈斯振荡的纵向磁阻，并利用这些来估计有效质量，载流子密度和迁移率。该分析揭示了这些纳米结构中存在缺陷以及生长运行之间的材料变异性。电子束光刻和接触沉积传输测量，使寄生生长去除。在未来，这种方法可以使其他材料系统被探索用于受限的横向外延，提高材料质量，并研究在这种纳米器件中的各种量子输运现象。
Template-assisted selective area growth techniques have gained popularity for their ability to grow epitaxial materials in prefabricated dielectric templates. Confined epitaxial lateral overgrowth (CELO) is one such technique that uses dielectric templates to define the geometry of the grown nanostructures. Two terminal low-temperature magneto-transport measurements were used to determine electronic properties. For doped In0.53Ga0.47As CELO nanostructures, we observe Shubnikov–De Hass oscillations in the longitudinal magnetoresistance and utilize these to estimate effective mass, carrier density, and mobilities. This analysis both reveals the presence of defects in these nanostructures and material variabilities between growth runs. Electron beam lithography and contact deposition for transport measurements were enabled by parasitic growth removal. In the future, this approach can enable other material systems to be explored for confined lateral epitaxy, improve material quality, and investigate a variety of quantum transport phenomenon in such nanoscale devices.