Van der Waals epitaxial growth and optoelectronics of a vertical MoS(2)/WSe(2) p-n junction.
Van der Waals epitaxial growth and optoelectronics of a vertical MoS(2)/WSe(2) p-n junction.
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DOI：
10.1007/s12200-022-00041-4
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发表时间：
2022-10-11
影响因子：
5.4
通讯作者：
Pan, Anlian
中科院分区：
文献类型：
--
作者：
Xiao, Yu;Qu, Junyu;Luo, Ziyu;Chen, Ying;Yang, Xin;Zhang, Danliang;Li, Honglai;Zheng, Biyuan;Yi, Jiali;Wu, Rong;You, Wenxia;Liu, Bo;Chen, Shula;Pan, Anlian
二维过渡金属二硫属化合物（TMDs）由于其独特的电学和光学性质引起了人们的广泛关注。特别是，TMD可以灵活地组合，形成不同的垂直货车德瓦尔斯（vdWs）异质结构，而不受晶格匹配的限制，这为新型光电应用的基础研究创造了巨大的机会。在这里，我们报告了一个原子级薄的垂直p-n结WSe 2/MoS 2的化学气相沉积法生产。透射电子显微镜和稳态光致发光实验表明其高质量和优异的光学性能。用这种p-n结制作的背栅场效应晶体管（FET）具有双极特性，迁移率为9 cm 2/（V·s）。此外，基于MoS 2/WSe 2异质结的光电探测器表现出优异的光电性能（R = 8 A/W，D* = 2.93 × 1011 Jones，开/关比为104），这得益于跨界面的内建电场。直接生长的TMDs p-n垂直异质结为未来的光电应用提供了一个新的平台。在线版本包含补充材料，可通过10.1007/s12200-022-00041-4获得。
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattice matching, which creates vast opportunities for fundamental investigation of novel optoelectronic applications. Here, we report an atomically thin vertical p–n junction WSe2/MoS2 produced by a chemical vapor deposition method. Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties. Back gate field effect transistor (FET) constructed using this p–n junction exhibits bipolar behaviors and a mobility of 9 cm2/(V·s). In addition, the photodetector based on MoS2/WSe2 heterostructures displays outstanding optoelectronic properties (R = 8 A/W, D* = 2.93 × 1011 Jones, on/off ratio of 104), which benefited from the built-in electric field across the interface. The direct growth of TMDs p–n vertical heterostructures may offer a novel platform for future optoelectronic applications. The online version contains supplementary material available at 10.1007/s12200-022-00041-4.